An Assessment of Available Models for the Design of Schottky-Based Multipliers Up to THz Frequencies, 2014
Diego Pardo, Jesús Grajal, Carlos G. Pérez-Moreno, and Susana Pérez
分析GaAs SBD仿真模型，作为doubler （200G-1.5THz） and tripler（2.7THz）与实验结果对比。
THz multiplier
[49] F. Maiwald, E. Schlecht, A. Maestrini, G. Chattopadhyay, J. C.
Pearson, D. Pukala, and I. Mehdi, “THz frequency multiplier chains
based on planar Schottky diodes,” in Proc. SPIE, Feb. 2003, vol. 4855,
pp. 447–458.
0.2THz doubler with 6 anodes (26%)and 0.4THz doubler with 4 anodes(18.3%)
[50] G. Chattopadhyay, E. Schlecht, J. S. Ward, J. J. Gill, H. H. S. Javadi,
F. Maiwald, and I. Mehdi, “An all-solid-state broad-band frequency
multiplier chain at 1500 GHz,” IEEE Trans. Microw. Theory Techn.,
vol. 52, no. 5, pp. 1538–1547, May 2004.
1.5THz with 2 anodes(4.5%)
[51] G. Chattopadhyay, E. Schlecht, J. Gill, S. Martin, A. Maestrini, D.
Pukala, F. Maiwald, and I. Mehdi, “A broadband 800 GHz Schottky
balanced doubler,” IEEE Microw. Wireless Compon. Lett., vol. 12, no.
4, pp. 117–118, Apr. 2002.fabrication
S. Martin, B. Nakamura, A. Fung, P. Smith, J. Bruston, A. Maestrini,
F. Maiwald, P. Siegel, E. Schlecht, and I. Mehdi, “Fabrication of 200
to 2700 GHz multiplier devices using GaAs and metal membranes,” in
2001 IEEE MTT-S Int. Microwave Symp. Dig., Phoenix, AZ, May 2001,
pp. 1641–1644.
0.8THz with 2 anodes(13.5%)
